sot223 npn silicon planar high performance transistor issue 3? february 1995 j features * low saturation voltage complementary type ? fzt755 partmarking detail ? FZT655 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 150 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 150 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =125v emitter cut-off current i ebo 0.1 m a v eb =3v collector-emitter saturation voltage v ce(sat) 0.5 0.5 v v i c =500ma, i b =50ma* i c =1a, i b =200ma* base-emitter saturation voltage v be(sat) 1.1 v i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.0 v i c =500ma, v ce =5v* static forward current transfer ratio h fe 50 50 20 300 i c =10ma, v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* transition frequency f t 30 mhz i c =10ma, v ce =20v f=20mhz output capacitance c obo 20 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FZT655 FZT655 c c e b 3 - 212 3 - 211 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol t s) single pulse test at t amb =25c 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v - ( v ol t s) i c /i b =10 i c - collector current (amps) h fe v i c h - nor m al i sed g ai n ( % ) 0.01 10 0.1 1 v ce =5v 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 i c /i b =10 0.4 40 60 80 100 i c - collector current (amps) v be(on) v i c v - ( v ol ts ) switching speeds i c - collector current (amps) s w i tc hi ng t i m e 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.6 0.7 0 ts s 2.0 1.0 3.0 td tr tf s 0.3 0.2 0.1 0.4 0.5 0.18 0.10 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 v ce =5v v ce =10v 11000 100ms 10ms 10 dc 0.01 v ce - collector emitter voltage (v) safe operating area 1ms 300 m s 10 100 0.1 1
sot223 npn silicon planar high performance transistor issue 3? february 1995 j features * low saturation voltage complementary type ? fzt755 partmarking detail ? FZT655 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 150 v emitter-base voltage v ebo 5v peak pulse current i cm 2a continuous collector current i c 1a power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 150 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 150 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =125v emitter cut-off current i ebo 0.1 m a v eb =3v collector-emitter saturation voltage v ce(sat) 0.5 0.5 v v i c =500ma, i b =50ma* i c =1a, i b =200ma* base-emitter saturation voltage v be(sat) 1.1 v i c =500ma, i b =50ma* base-emitter turn-on voltage v be(on) 1.0 v i c =500ma, v ce =5v* static forward current transfer ratio h fe 50 50 20 300 i c =10ma, v ce =5v* i c =500ma, v ce =5v* i c =1a, v ce =5v* transition frequency f t 30 mhz i c =10ma, v ce =20v f=20mhz output capacitance c obo 20 pf v cb =10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FZT655 FZT655 c c e b 3 - 212 3 - 211 typical characteristics v ce(sat) v i c i c - collector current (amps) v - ( v ol t s) single pulse test at t amb =25c 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v - ( v ol t s) i c /i b =10 i c - collector current (amps) h fe v i c h - nor m al i sed g ai n ( % ) 0.01 10 0.1 1 v ce =5v 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 i c /i b =10 0.4 40 60 80 100 i c - collector current (amps) v be(on) v i c v - ( v ol ts ) switching speeds i c - collector current (amps) s w i tc hi ng t i m e 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr 0.6 0.7 0 ts s 2.0 1.0 3.0 td tr tf s 0.3 0.2 0.1 0.4 0.5 0.18 0.10 20 0 0.01 10 0.1 1 0.6 0.8 1.0 1.2 0.4 v ce =5v v ce =10v 11000 100ms 10ms 10 dc 0.01 v ce - collector emitter voltage (v) safe operating area 1ms 300 m s 10 100 0.1 1
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